TY - JOUR
T1 - A numerical analysis of a MOCVD process for the growth of GaN nanowires using GaCl3 and NH3
AU - Serrano Perez, Edgar
AU - Nuñez Velazquez, Miguel A.
AU - Juárez Lopez, Fernando
N1 - Publisher Copyright:
© 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
PY - 2015/4/1
Y1 - 2015/4/1
N2 - In this paper, the analysis of horizontal cold wall reactor for GaN nanowires growing from GaCl3 and NH3 at atmospheric pressure conditions has been studied. It aims to provide better understanding of the MOCVD process especially of deposition process of GaN nanowires as well as fluid dynamics inside the reactor. Numerical solution to transport model coupled with 2D geometry using CFD shows several results including GaCl3 thermal decomposition at different temperature conditions, velocity and temperature distribution as well as concentration profiles into reactor. Afterwards experimental parameters of temperature and gases flow were set to growth of GaN nanowires. Scanning electron microscopy analysis shows the microstructural characteristics of GaN nanowires.
AB - In this paper, the analysis of horizontal cold wall reactor for GaN nanowires growing from GaCl3 and NH3 at atmospheric pressure conditions has been studied. It aims to provide better understanding of the MOCVD process especially of deposition process of GaN nanowires as well as fluid dynamics inside the reactor. Numerical solution to transport model coupled with 2D geometry using CFD shows several results including GaCl3 thermal decomposition at different temperature conditions, velocity and temperature distribution as well as concentration profiles into reactor. Afterwards experimental parameters of temperature and gases flow were set to growth of GaN nanowires. Scanning electron microscopy analysis shows the microstructural characteristics of GaN nanowires.
KW - CFD
KW - Gallium
KW - MOCVD
KW - Nanowires
UR - http://www.scopus.com/inward/record.url?scp=84928583872&partnerID=8YFLogxK
U2 - 10.1002/pssc.201400165
DO - 10.1002/pssc.201400165
M3 - Artículo
SN - 1862-6351
VL - 12
SP - 389
EP - 393
JO - Physica Status Solidi (C) Current Topics in Solid State Physics
JF - Physica Status Solidi (C) Current Topics in Solid State Physics
IS - 4-5
ER -