TY - JOUR
T1 - A new approach for approximate solution of ADE
T2 - Physical-based modeling of carriers in Doping Region
AU - Hernandez-Gonzalez, Leobardo
AU - Ramirez-Hernandez, Jazmin
AU - Juarez-Sandoval, Oswaldo Ulises
AU - Olivares-Robles, Miguel Angel
AU - Sanchez, Ramon Blanco
AU - Del Pilar Gibert Delgado, Rosario
N1 - Publisher Copyright:
© 2021 by the authors. Licensee MDPI, Basel, Switzerland.
PY - 2021/3/1
Y1 - 2021/3/1
N2 - The electric behavior in semiconductor devices is the result of the electric carriers’ injection and evacuation in the low doping region, N-. The carrier’s dynamic is determined by the ambipolar diffusion equation (ADE), which involves the main physical phenomena in the low doping region. The ADE does not have a direct analytic solution since it is a spatio-temporal second-order differential equation. The numerical solution is the most used, but is inadequate to be integrated into commercial electric circuit simulators. In this paper, an empiric approximation is proposed as the solution of the ADE. The proposed solution was validated using the final equations that were implemented in a simulator; the results were compared with the experimental results in each phase, obtaining a similarity in the current waveforms. Finally, an advantage of the proposed methodology is that the final expressions obtained can be easily implemented in commercial simulators.
AB - The electric behavior in semiconductor devices is the result of the electric carriers’ injection and evacuation in the low doping region, N-. The carrier’s dynamic is determined by the ambipolar diffusion equation (ADE), which involves the main physical phenomena in the low doping region. The ADE does not have a direct analytic solution since it is a spatio-temporal second-order differential equation. The numerical solution is the most used, but is inadequate to be integrated into commercial electric circuit simulators. In this paper, an empiric approximation is proposed as the solution of the ADE. The proposed solution was validated using the final equations that were implemented in a simulator; the results were compared with the experimental results in each phase, obtaining a similarity in the current waveforms. Finally, an advantage of the proposed methodology is that the final expressions obtained can be easily implemented in commercial simulators.
KW - Physical modeling
KW - Silicon carbide
KW - Simulation semiconductor
UR - http://www.scopus.com/inward/record.url?scp=85102268805&partnerID=8YFLogxK
U2 - 10.3390/math9050458
DO - 10.3390/math9050458
M3 - Artículo
AN - SCOPUS:85102268805
SN - 2227-7390
VL - 9
SP - 1
EP - 21
JO - Mathematics
JF - Mathematics
IS - 5
M1 - 458
ER -