TY - JOUR
T1 - A failure-detection strategy for IGBT based on gate-voltage behavior applied to a motor drive system
AU - Rodríguez-Blanco, Marco Antonio
AU - Claudio-Sánchez, Abraham
AU - Theilliol, Didier
AU - Vela-Valdés, Luis Gerardo
AU - Sibaja-Terán, Pedro
AU - Hernández-González, Leobardo
AU - Aguayo-Alquicira, Jesus
N1 - Funding Information:
Manuscript received December 22, 2009; revised July 23, 2010; accepted August 25, 2010. Date of publication December 10, 2010; date of current version April 13, 2011. This work was supported in part by the Secretaría de Educación Pública through Programa de mejoramiento al profesorado Nancy-Université (PROMEP/103.5/10/4451) and in part by Projects DAIT/2010/10 and SIP20100437 of Autonomous University of Carmen City (UNACAR) and Escuela Superior de Ingeniería Mecánica y Eléctrica del Instituto Politécnico Nacional, respectively.
PY - 2011/5
Y1 - 2011/5
N2 - In this paper, a novel failure-detection technique and its analog circuit for insulated gate bipolar transistors (IGBTs), under open- and short-circuit failures, are proposed. This technique is applied to a three-phase induction-motor (IM) drive system. The detection technique is adapted to detect failures of short-circuit and open-circuit in the IGBT, which is based on gate-signal monitoring. The most important issue of this technique is the reduction of time for fault detection. This is very important in a failure-tolerant IM drive based on the material-redundancy approach or protection systems since the detection must be done before the device is damaged, in approximately less than 10 μ . The experimental test and simulations are presented in order to validate the proposed fault-detection technique, and it is validated, achieving replacement of the damaged element in the most suitable time.
AB - In this paper, a novel failure-detection technique and its analog circuit for insulated gate bipolar transistors (IGBTs), under open- and short-circuit failures, are proposed. This technique is applied to a three-phase induction-motor (IM) drive system. The detection technique is adapted to detect failures of short-circuit and open-circuit in the IGBT, which is based on gate-signal monitoring. The most important issue of this technique is the reduction of time for fault detection. This is very important in a failure-tolerant IM drive based on the material-redundancy approach or protection systems since the detection must be done before the device is damaged, in approximately less than 10 μ . The experimental test and simulations are presented in order to validate the proposed fault-detection technique, and it is validated, achieving replacement of the damaged element in the most suitable time.
KW - Analog circuits
KW - driver circuits
KW - fault location
KW - insulated gate bipolar transistors (IGBTs)
KW - semiconductor-device measurements
KW - time delay
UR - http://www.scopus.com/inward/record.url?scp=79954516751&partnerID=8YFLogxK
U2 - 10.1109/TIE.2010.2098355
DO - 10.1109/TIE.2010.2098355
M3 - Artículo
SN - 0278-0046
VL - 58
SP - 1625
EP - 1633
JO - IEEE Transactions on Industrial Electronics
JF - IEEE Transactions on Industrial Electronics
IS - 5
M1 - 5664785
ER -