A failure-detection strategy for IGBT based on gate-voltage behavior applied to a motor drive system

Marco Antonio Rodríguez-Blanco, Abraham Claudio-Sánchez, Didier Theilliol, Luis Gerardo Vela-Valdés, Pedro Sibaja-Terán, Leobardo Hernández-González, Jesus Aguayo-Alquicira

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Abstract

In this paper, a novel failure-detection technique and its analog circuit for insulated gate bipolar transistors (IGBTs), under open- and short-circuit failures, are proposed. This technique is applied to a three-phase induction-motor (IM) drive system. The detection technique is adapted to detect failures of short-circuit and open-circuit in the IGBT, which is based on gate-signal monitoring. The most important issue of this technique is the reduction of time for fault detection. This is very important in a failure-tolerant IM drive based on the material-redundancy approach or protection systems since the detection must be done before the device is damaged, in approximately less than 10 μ . The experimental test and simulations are presented in order to validate the proposed fault-detection technique, and it is validated, achieving replacement of the damaged element in the most suitable time. © 2010 IEEE.
Original languageAmerican English
Pages (from-to)1625-1633
Number of pages1461
JournalIEEE Transactions on Industrial Electronics
DOIs
StatePublished - 1 May 2011

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Rodríguez-Blanco, M. A., Claudio-Sánchez, A., Theilliol, D., Vela-Valdés, L. G., Sibaja-Terán, P., Hernández-González, L., & Aguayo-Alquicira, J. (2011). A failure-detection strategy for IGBT based on gate-voltage behavior applied to a motor drive system. IEEE Transactions on Industrial Electronics, 1625-1633. https://doi.org/10.1109/TIE.2010.2098355