A failure-detection strategy for IGBT based on gate-voltage behavior applied to a motor drive system

Marco Antonio Rodríguez-Blanco, Abraham Claudio-Sánchez, Didier Theilliol, Luis Gerardo Vela-Valdés, Pedro Sibaja-Terán, Leobardo Hernández-González, Jesus Aguayo-Alquicira

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238 Scopus citations

Abstract

In this paper, a novel failure-detection technique and its analog circuit for insulated gate bipolar transistors (IGBTs), under open- and short-circuit failures, are proposed. This technique is applied to a three-phase induction-motor (IM) drive system. The detection technique is adapted to detect failures of short-circuit and open-circuit in the IGBT, which is based on gate-signal monitoring. The most important issue of this technique is the reduction of time for fault detection. This is very important in a failure-tolerant IM drive based on the material-redundancy approach or protection systems since the detection must be done before the device is damaged, in approximately less than 10 μ . The experimental test and simulations are presented in order to validate the proposed fault-detection technique, and it is validated, achieving replacement of the damaged element in the most suitable time.

Original languageEnglish
Article number5664785
Pages (from-to)1625-1633
Number of pages9
JournalIEEE Transactions on Industrial Electronics
Volume58
Issue number5
DOIs
StatePublished - May 2011

Keywords

  • Analog circuits
  • driver circuits
  • fault location
  • insulated gate bipolar transistors (IGBTs)
  • semiconductor-device measurements
  • time delay

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