Crystallization mechanism in films along GeTe-SbTe pseudo-binary line

E. Morales-Sanchez; E. Prokhorov; J. A. Muñoz Salas; J. González-Hernández; G. Trapaga

doi:10.1109/ICEEE.2009.5393373

Crystallization mechanism in films along GeTe-SbTe pseudo-binary line

E. Morales-Sanchez, E. Prokhorov, J. A. Muñoz Salas, J. González-Hernández, G. Trapaga

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

The aim of this work is to compare the isothermal crystallization kinetic in the films along GeTe-Sb₂Te₃ line with composition Ge₂Sb₂Te₅, Ge₁Sb₂Te ₄, Ge₁Sb₄Te₇ and Ge ₄Sb₁Te₅ using mainly Johnson-Mehl-Avrami- Kolmogorov (JMAK) model. Results obtained have shown different crystallization mechanism in the investigated films. In Ge₂Sb₂Te ₅ and Ge₁Sb₂Te₄ films the analysis of the kinetic results (Avrani coefficient) showed that at the beginning of crystallization a metastable phase appeared with the Ge₁Sb ₄Te₇ composition, this is followed by the nucleation and growth of the stable fcc phase up to full crystallization. In contrast Ge ₄Sb₁Te₅ and Ge₁Sb₄Te ₇ films show diffusion control growing from small dimension grains with decreasing nucleation rate.

Original language	English
Title of host publication	2009 6th International Conference on Electrical Engineering, Computing Science and Automatic Control, CCE 2009
DOIs	https://doi.org/10.1109/ICEEE.2009.5393373
State	Published - 2009
Externally published	Yes
Event	2009 6th International Conference on Electrical Engineering, Computing Science and Automatic Control, CCE 2009 - Toluca, Mexico Duration: 10 Nov 2009 → 13 Nov 2009

Publication series

Name	2009 6th International Conference on Electrical Engineering, Computing Science and Automatic Control, CCE 2009

Conference

Conference	2009 6th International Conference on Electrical Engineering, Computing Science and Automatic Control, CCE 2009
Country/Territory	Mexico
City	Toluca
Period	10/11/09 → 13/11/09

Keywords

Crystallization
Growth phase
Nucleation

Access to Document

10.1109/ICEEE.2009.5393373

Cite this

Morales-Sanchez, E., Prokhorov, E., Muñoz Salas, J. A., González-Hernández, J., & Trapaga, G. (2009). Crystallization mechanism in films along GeTe-SbTe pseudo-binary line. In 2009 6th International Conference on Electrical Engineering, Computing Science and Automatic Control, CCE 2009 Article 5393373 (2009 6th International Conference on Electrical Engineering, Computing Science and Automatic Control, CCE 2009). https://doi.org/10.1109/ICEEE.2009.5393373

@inproceedings{1ed6d2a671774247a46af13678ef26c6,

title = "Crystallization mechanism in films along GeTe-SbTe pseudo-binary line",

abstract = "The aim of this work is to compare the isothermal crystallization kinetic in the films along GeTe-Sb2Te3 line with composition Ge2Sb2Te5, Ge1Sb2Te 4, Ge1Sb4Te7 and Ge 4Sb1Te5 using mainly Johnson-Mehl-Avrami- Kolmogorov (JMAK) model. Results obtained have shown different crystallization mechanism in the investigated films. In Ge2Sb2Te 5 and Ge1Sb2Te4 films the analysis of the kinetic results (Avrani coefficient) showed that at the beginning of crystallization a metastable phase appeared with the Ge1Sb 4Te7 composition, this is followed by the nucleation and growth of the stable fcc phase up to full crystallization. In contrast Ge 4Sb1Te5 and Ge1Sb4Te 7 films show diffusion control growing from small dimension grains with decreasing nucleation rate.",

keywords = "Crystallization, Growth phase, Nucleation",

author = "E. Morales-Sanchez and E. Prokhorov and {Mu{\~n}oz Salas}, {J. A.} and J. Gonz{\'a}lez-Hern{\'a}ndez and G. Trapaga",

year = "2009",

doi = "10.1109/ICEEE.2009.5393373",

language = "Ingl{\'e}s",

isbn = "9781424446896",

series = "2009 6th International Conference on Electrical Engineering, Computing Science and Automatic Control, CCE 2009",

booktitle = "2009 6th International Conference on Electrical Engineering, Computing Science and Automatic Control, CCE 2009",

note = "2009 6th International Conference on Electrical Engineering, Computing Science and Automatic Control, CCE 2009 ; Conference date: 10-11-2009 Through 13-11-2009",

}

Morales-Sanchez, E, Prokhorov, E, Muñoz Salas, JA, González-Hernández, J & Trapaga, G 2009, Crystallization mechanism in films along GeTe-SbTe pseudo-binary line. in 2009 6th International Conference on Electrical Engineering, Computing Science and Automatic Control, CCE 2009., 5393373, 2009 6th International Conference on Electrical Engineering, Computing Science and Automatic Control, CCE 2009, 2009 6th International Conference on Electrical Engineering, Computing Science and Automatic Control, CCE 2009, Toluca, Mexico, 10/11/09. https://doi.org/10.1109/ICEEE.2009.5393373

Crystallization mechanism in films along GeTe-SbTe pseudo-binary line. / Morales-Sanchez, E.; Prokhorov, E.; Muñoz Salas, J. A. et al.
2009 6th International Conference on Electrical Engineering, Computing Science and Automatic Control, CCE 2009. 2009. 5393373 (2009 6th International Conference on Electrical Engineering, Computing Science and Automatic Control, CCE 2009).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Crystallization mechanism in films along GeTe-SbTe pseudo-binary line

AU - Morales-Sanchez, E.

AU - Prokhorov, E.

AU - Muñoz Salas, J. A.

AU - González-Hernández, J.

AU - Trapaga, G.

PY - 2009

Y1 - 2009

N2 - The aim of this work is to compare the isothermal crystallization kinetic in the films along GeTe-Sb2Te3 line with composition Ge2Sb2Te5, Ge1Sb2Te 4, Ge1Sb4Te7 and Ge 4Sb1Te5 using mainly Johnson-Mehl-Avrami- Kolmogorov (JMAK) model. Results obtained have shown different crystallization mechanism in the investigated films. In Ge2Sb2Te 5 and Ge1Sb2Te4 films the analysis of the kinetic results (Avrani coefficient) showed that at the beginning of crystallization a metastable phase appeared with the Ge1Sb 4Te7 composition, this is followed by the nucleation and growth of the stable fcc phase up to full crystallization. In contrast Ge 4Sb1Te5 and Ge1Sb4Te 7 films show diffusion control growing from small dimension grains with decreasing nucleation rate.

AB - The aim of this work is to compare the isothermal crystallization kinetic in the films along GeTe-Sb2Te3 line with composition Ge2Sb2Te5, Ge1Sb2Te 4, Ge1Sb4Te7 and Ge 4Sb1Te5 using mainly Johnson-Mehl-Avrami- Kolmogorov (JMAK) model. Results obtained have shown different crystallization mechanism in the investigated films. In Ge2Sb2Te 5 and Ge1Sb2Te4 films the analysis of the kinetic results (Avrani coefficient) showed that at the beginning of crystallization a metastable phase appeared with the Ge1Sb 4Te7 composition, this is followed by the nucleation and growth of the stable fcc phase up to full crystallization. In contrast Ge 4Sb1Te5 and Ge1Sb4Te 7 films show diffusion control growing from small dimension grains with decreasing nucleation rate.

KW - Crystallization

KW - Growth phase

KW - Nucleation

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U2 - 10.1109/ICEEE.2009.5393373

DO - 10.1109/ICEEE.2009.5393373

M3 - Contribución a la conferencia

AN - SCOPUS:77949814664

SN - 9781424446896

T3 - 2009 6th International Conference on Electrical Engineering, Computing Science and Automatic Control, CCE 2009

BT - 2009 6th International Conference on Electrical Engineering, Computing Science and Automatic Control, CCE 2009

T2 - 2009 6th International Conference on Electrical Engineering, Computing Science and Automatic Control, CCE 2009

Y2 - 10 November 2009 through 13 November 2009

ER -

Morales-Sanchez E, Prokhorov E, Muñoz Salas JA, González-Hernández J, Trapaga G. Crystallization mechanism in films along GeTe-SbTe pseudo-binary line. In 2009 6th International Conference on Electrical Engineering, Computing Science and Automatic Control, CCE 2009. 2009. 5393373. (2009 6th International Conference on Electrical Engineering, Computing Science and Automatic Control, CCE 2009). doi: 10.1109/ICEEE.2009.5393373

Crystallization mechanism in films along GeTe-SbTe pseudo-binary line

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