The aim of this work is to compare the isothermal crystallization kinetic in the films along GeTe-Sb 2 Te 3 line with composition Ge 2 Sb 2 Te 5 , Ge 1 Sb 2 Te 4 , Ge 1 Sb 4 Te 7 and Ge 4 Sb 1 Te 5 using mainly Johnson-Mehl-Avrami- Kolmogorov (JMAK) model. Results obtained have shown different crystallization mechanism in the investigated films. In Ge 2 Sb 2 Te 5 and Ge 1 Sb 2 Te 4 films the analysis of the kinetic results (Avrani coefficient) showed that at the beginning of crystallization a metastable phase appeared with the Ge 1 Sb 4 Te 7 composition, this is followed by the nucleation and growth of the stable fcc phase up to full crystallization. In contrast Ge 4 Sb 1 Te 5 and Ge 1 Sb 4 Te 7 films show diffusion control growing from small dimension grains with decreasing nucleation rate.
Morales-Sanchez, E., Prokhorov, E., Muñoz Salas, J. A., González-Hernández, J., & Trapaga, G. (2009). 2009 6th International Conference on Electrical Engineering, Computing Science and Automatic Control, CCE 2009. Paper presented at conference, . https://doi.org/10.1109/ICEEE.2009.5393373