2009 6th International Conference on Electrical Engineering, Computing Science and Automatic Control, CCE 2009

E. Morales-Sanchez, E. Prokhorov, J. A. Muñoz Salas, J. González-Hernández, G. Trapaga

Research output: Contribution to conferencePaperResearch

Abstract

The aim of this work is to compare the isothermal crystallization kinetic in the films along GeTe-Sb 2 Te 3 line with composition Ge 2 Sb 2 Te 5 , Ge 1 Sb 2 Te 4 , Ge 1 Sb 4 Te 7 and Ge 4 Sb 1 Te 5 using mainly Johnson-Mehl-Avrami- Kolmogorov (JMAK) model. Results obtained have shown different crystallization mechanism in the investigated films. In Ge 2 Sb 2 Te 5 and Ge 1 Sb 2 Te 4 films the analysis of the kinetic results (Avrani coefficient) showed that at the beginning of crystallization a metastable phase appeared with the Ge 1 Sb 4 Te 7 composition, this is followed by the nucleation and growth of the stable fcc phase up to full crystallization. In contrast Ge 4 Sb 1 Te 5 and Ge 1 Sb 4 Te 7 films show diffusion control growing from small dimension grains with decreasing nucleation rate.
Original languageAmerican English
DOIs
StatePublished - 1 Dec 2009
Externally publishedYes
Eventconference -
Duration: 1 Dec 2009 → …

Conference

Conferenceconference
Period1/12/09 → …

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electrical engineering
automatic control
crystallization
nucleation
kinetics
coefficients

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Morales-Sanchez, E., Prokhorov, E., Muñoz Salas, J. A., González-Hernández, J., & Trapaga, G. (2009). 2009 6th International Conference on Electrical Engineering, Computing Science and Automatic Control, CCE 2009. Paper presented at conference, . https://doi.org/10.1109/ICEEE.2009.5393373
Morales-Sanchez, E. ; Prokhorov, E. ; Muñoz Salas, J. A. ; González-Hernández, J. ; Trapaga, G. / 2009 6th International Conference on Electrical Engineering, Computing Science and Automatic Control, CCE 2009. Paper presented at conference, .
@conference{1ed6d2a671774247a46af13678ef26c6,
title = "2009 6th International Conference on Electrical Engineering, Computing Science and Automatic Control, CCE 2009",
abstract = "The aim of this work is to compare the isothermal crystallization kinetic in the films along GeTe-Sb 2 Te 3 line with composition Ge 2 Sb 2 Te 5 , Ge 1 Sb 2 Te 4 , Ge 1 Sb 4 Te 7 and Ge 4 Sb 1 Te 5 using mainly Johnson-Mehl-Avrami- Kolmogorov (JMAK) model. Results obtained have shown different crystallization mechanism in the investigated films. In Ge 2 Sb 2 Te 5 and Ge 1 Sb 2 Te 4 films the analysis of the kinetic results (Avrani coefficient) showed that at the beginning of crystallization a metastable phase appeared with the Ge 1 Sb 4 Te 7 composition, this is followed by the nucleation and growth of the stable fcc phase up to full crystallization. In contrast Ge 4 Sb 1 Te 5 and Ge 1 Sb 4 Te 7 films show diffusion control growing from small dimension grains with decreasing nucleation rate.",
author = "E. Morales-Sanchez and E. Prokhorov and {Mu{\~n}oz Salas}, {J. A.} and J. Gonz{\'a}lez-Hern{\'a}ndez and G. Trapaga",
year = "2009",
month = "12",
day = "1",
doi = "10.1109/ICEEE.2009.5393373",
language = "American English",
note = "conference ; Conference date: 01-12-2009",

}

Morales-Sanchez, E, Prokhorov, E, Muñoz Salas, JA, González-Hernández, J & Trapaga, G 2009, '2009 6th International Conference on Electrical Engineering, Computing Science and Automatic Control, CCE 2009' Paper presented at conference, 1/12/09, . https://doi.org/10.1109/ICEEE.2009.5393373

2009 6th International Conference on Electrical Engineering, Computing Science and Automatic Control, CCE 2009. / Morales-Sanchez, E.; Prokhorov, E.; Muñoz Salas, J. A.; González-Hernández, J.; Trapaga, G.

2009. Paper presented at conference, .

Research output: Contribution to conferencePaperResearch

TY - CONF

T1 - 2009 6th International Conference on Electrical Engineering, Computing Science and Automatic Control, CCE 2009

AU - Morales-Sanchez, E.

AU - Prokhorov, E.

AU - Muñoz Salas, J. A.

AU - González-Hernández, J.

AU - Trapaga, G.

PY - 2009/12/1

Y1 - 2009/12/1

N2 - The aim of this work is to compare the isothermal crystallization kinetic in the films along GeTe-Sb 2 Te 3 line with composition Ge 2 Sb 2 Te 5 , Ge 1 Sb 2 Te 4 , Ge 1 Sb 4 Te 7 and Ge 4 Sb 1 Te 5 using mainly Johnson-Mehl-Avrami- Kolmogorov (JMAK) model. Results obtained have shown different crystallization mechanism in the investigated films. In Ge 2 Sb 2 Te 5 and Ge 1 Sb 2 Te 4 films the analysis of the kinetic results (Avrani coefficient) showed that at the beginning of crystallization a metastable phase appeared with the Ge 1 Sb 4 Te 7 composition, this is followed by the nucleation and growth of the stable fcc phase up to full crystallization. In contrast Ge 4 Sb 1 Te 5 and Ge 1 Sb 4 Te 7 films show diffusion control growing from small dimension grains with decreasing nucleation rate.

AB - The aim of this work is to compare the isothermal crystallization kinetic in the films along GeTe-Sb 2 Te 3 line with composition Ge 2 Sb 2 Te 5 , Ge 1 Sb 2 Te 4 , Ge 1 Sb 4 Te 7 and Ge 4 Sb 1 Te 5 using mainly Johnson-Mehl-Avrami- Kolmogorov (JMAK) model. Results obtained have shown different crystallization mechanism in the investigated films. In Ge 2 Sb 2 Te 5 and Ge 1 Sb 2 Te 4 films the analysis of the kinetic results (Avrani coefficient) showed that at the beginning of crystallization a metastable phase appeared with the Ge 1 Sb 4 Te 7 composition, this is followed by the nucleation and growth of the stable fcc phase up to full crystallization. In contrast Ge 4 Sb 1 Te 5 and Ge 1 Sb 4 Te 7 films show diffusion control growing from small dimension grains with decreasing nucleation rate.

U2 - 10.1109/ICEEE.2009.5393373

DO - 10.1109/ICEEE.2009.5393373

M3 - Paper

ER -